IRL100HS121

Rochester Electronics
In Stock: 4,127

Can ship immediately

Pricing:
  • 1$0.36
  • 4,000$0.17227
  • 8,000$0.1646
  • 12,000$0.15912

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:42mOhm @ 6.7A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 10µA

 

  • Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):11.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-PQFN (2x2)
  • Package / Case:6-VDFN Exposed Pad

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