ISS55EP06LMXTSA1

Technical Details

• Series:OptiMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:5.5Ohm @ 180mA, 10V
• Vgs(th) (Max) @ Id:2V @ 11µA

• Gate Charge (Qg) (Max) @ Vgs:590 pC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:18 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):400mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT23-3-5
• Package / Case:TO-236-3, SC-59, SOT-23-3