IPD35N12S3L24ATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIPD35N12 - 120V-300V N-CHANNEL A
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD35N12S3L24ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,174
Can ship immediately
Pricing:
- 1$0.41
- 2,500$0.21361
- 5,000$0.20292
- 12,500$0.1953
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):120 V
- Current - Continuous Drain (Id) @ 25°C:35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:24mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:2.4V @ 39µA
- Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.7 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):71W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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