IPD65R660CFDBTMA1

Rochester Electronics
In Stock: 2,650

Can ship immediately

Pricing:
  • 1$0.58
  • 2,500$0.58

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Technical Details

  • Series:CoolMOS™
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:660mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 200µA

 

  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:615 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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