FCP600N65S3R0
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 6A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FCP600N65S3R0 Datasheet
-
ECAD Model
- Share
In Stock: 1,787
Can ship immediately
Pricing:
- 1$0.67
- 800$0.67
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Technical Details
- Series:SuperFET® III
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):54W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
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