IPP90R1K2C3XKSA1

Rochester Electronics
In Stock: 3,675

Can ship immediately

Pricing:
  • 1$0.68
  • 10$0.61948
  • 100$0.50477
  • 500$0.40059
  • 1,000$0.33808

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Technical Details

  • Series:CoolMOS™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 310µA

 

  • Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3
  • Package / Case:TO-220-3

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