SPD08P06PGBTMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 8.83A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SPD08P06PGBTMA1 Datasheet
-
ECAD Model
- Share
In Stock: 5,869
Can ship immediately
Pricing:
- 1$0.91
- 2,500$0.40674
- 5,000$0.37869
- 12,500$0.36466
- 25,000$0.35701
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Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:8.83A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):6.2V
- Rds On (Max) @ Id, Vgs:300mOhm @ 10A, 6.2V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):42W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
