FQB34N20LTM
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQB34N20LTM Datasheet
-
ECAD Model
- Share
In Stock: 3,411
Can ship immediately
Pricing:
- 1$1.11
- 800$0.64438
- 1,600$0.59398
- 2,400$0.5552
- 5,600$0.53581
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Technical Details
- Series:QFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:75mOhm @ 15.5A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:72 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.13W (Ta), 180W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
