IPB031NE7N3GATMA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):75 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:3.1mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 155µA

• Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8.13 pF @ 37.5 V
• FET Feature:-
• Power Dissipation (Max):214W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO263-3-2
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB