IQE006NE2LM5ATMA1

Technical Details

• Series:*
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:41A (Ta), 298A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:650mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:82.1 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:5453 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):2.1W (Ta), 89W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:PG-TSON-8-4
• Package / Case:8-PowerTDFN