IPB108N15N3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 150V 83A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB108N15N3GATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,587
Can ship immediately
Pricing:
- 1$4.5
- 1,000$2.47659
- 2,000$2.35276
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):150 V
- Current - Continuous Drain (Id) @ 25°C:83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):8V, 10V
- Rds On (Max) @ Id, Vgs:10.8mOhm @ 83A, 10V
- Vgs(th) (Max) @ Id:4V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
- FET Feature:-
- Power Dissipation (Max):214W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
MOSFET N-CH 250V TSON-8
- 1: $4.50000
- 5000: $2.17159
200V, P-CHANNEL REPETITIVE AVALA
- 1: $4.57000
MOSFET N-CH 80V 165A HSOG-8
- 1: $4.50000
- 1800: $2.22498
- 3600: $2.11372
