IMBG120R350M1HXTMA1

Technical Details

• Series:CoolSiC™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):1.2 kV
• Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:468mOhm @ 2A, 18V
• Vgs(th) (Max) @ Id:5.7V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:5.9 nC @ 18 V
• Vgs (Max):+18V, -15V
• Input Capacitance (Ciss) (Max) @ Vds:196 pF @ 800 V
• FET Feature:Standard
• Power Dissipation (Max):65W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO263-7-12
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA