IMBG120R220M1HXTMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT N-CH 1.2KV 13A TO263
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 1,119
Can ship immediately
Pricing:
- 1$10.51
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Technical Details
- Series:CoolSiC™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):1.2 kV
- Current - Continuous Drain (Id) @ 25°C:13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:294mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id:5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 18 V
- Vgs (Max):+18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds:312 pF @ 800 V
- FET Feature:Standard
- Power Dissipation (Max):83W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-7-12
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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