CSD18510KCS

Texas Instruments
In Stock: 462

Can ship immediately

Pricing:
  • 1$2.35
  • 10$2.12697
  • 50$1.90328
  • 100$1.71659
  • 500$1.34342
  • 1,000$1.11952
  • 2,500$1.0822

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Technical Details

  • Series:NexFET™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:75 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:11400 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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