TK1K9A60F,S4X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 3.7A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK1K9A60F,S4X Datasheet
-
ECAD Model
- Share
In Stock: 351
Can ship immediately
Pricing:
- 1$0.94
- 50$0.752
- 100$0.658
- 500$0.51029
- 1,000$0.40286
- 2,500$0.376
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Technical Details
- Series:U-MOSIX
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.9Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:4V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):30W (Tc)
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
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