RQ3E130BNTB

ROHM Semiconductor
In Stock: 367

Can ship immediately

Pricing:
  • 1$0.57
  • 3,000$0.15219
  • 6,000$0.14297
  • 15,000$0.13374
  • 30,000$0.12913

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-HSMT (3.2x3)
  • Package / Case:8-PowerVDFN

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