TSM4NB60CI C0G
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4A ITO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM4NB60CI C0G Datasheet
-
ECAD Model
- Share
In Stock: 989
Can ship immediately
Pricing:
- 1$1.09
- 10$0.96965
- 100$0.7664
- 500$0.59435
- 1,000$0.46921
- 3,000$0.43793
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):50W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:ITO-220AB
- Package / Case:TO-220-3 Full Pack, Isolated Tab
