STP6N65M2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 4A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STP6N65M2 Datasheet
-
ECAD Model
- Share
In Stock: 117
Can ship immediately
Pricing:
- 1$1.25
- 50$1.02449
- 100$0.92872
- 500$0.73705
- 1,000$0.62205
- 2,500$0.58371
- 5,000$0.56455
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Technical Details
- Series:MDmesh™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
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