IPAN60R650CEXKSA1

Technical Details

• Series:CoolMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:9.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:650mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 200µA

• Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
• FET Feature:Super Junction
• Power Dissipation (Max):28W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220 Full Pack
• Package / Case:TO-220-3 Full Pack