IPB120N04S4L02ATMA1

Technical Details

• Series:Automotive, AEC-Q101, OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 110µA

• Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
• Vgs (Max):+20V, -16V
• Input Capacitance (Ciss) (Max) @ Vds:14.56 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):158W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D²PAK (TO-263AB)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB