NDP6020P

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Rds On (Max) @ Id, Vgs:50mOhm @ 12A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:1.59 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):60W (Tc)
• Operating Temperature:-65°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220-3
• Package / Case:TO-220-3