IPB009N03LGATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 180A TO263-7
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB009N03LGATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 169
Can ship immediately
Pricing:
- 1$3.82
- 1,000$2.01639
- 2,000$1.91557
- 5,000$1.84356
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:0.95mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:227 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:25000 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-7-3
- Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Related Products
MOSFET N-CH 100V 200A DDPAK
- 1: $3.64000
- 500: $2.01984
- 1000: $1.71272
MOSFET N-CH 60V 53.7A/376A 8DFNW
- 1: $4.55000
MOSFET N-CH 40V 554.5A
- 1: $4.84000
- 3000: $2.52178
