IXTY1R6N100D2

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:10Ohm @ 800mA, 0V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:27 nC @ 5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 25 V
• FET Feature:Depletion Mode
• Power Dissipation (Max):100W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252, (D-Pak)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63