SCT2H12NZGC11
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1700V 3.7A TO3PFM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT2H12NZGC11 Datasheet
-
ECAD Model
- Share
In Stock: 151
Can ship immediately
Pricing:
- 1$6.54
- 10$5.90798
- 30$5.63319
- 120$4.89126
- 270$4.67143
- 510$4.25924
- 1,020$3.84705
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1700 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id:4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 18 V
- Vgs (Max):+22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds:184 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):35W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-3PFM
- Package / Case:TO-3PFM, SC-93-3
