BSC265N10LSFGATMA1

IR (Infineon Technologies)
In Stock: 148

Can ship immediately

Pricing:
  • 1$1.08
  • 5,000$0.50516
  • 10,000$0.48616

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Technical Details

  • Series:OptiMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:26.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 43µA

 

  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):78W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-1
  • Package / Case:8-PowerTDFN

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