TK7S10N1Z,LQ
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 7A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK7S10N1Z,LQ Datasheet
-
ECAD Model
- Share
In Stock: 197
Can ship immediately
Pricing:
- 1$1.42
- 2,000$0.546
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Technical Details
- Series:U-MOSVIII-H
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:48mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):50W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK+
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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