C2M0280120D

Technical Details

• Series:Z-FET™
• Package:Tube
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:370mOhm @ 6A, 20V
• Vgs(th) (Max) @ Id:2.8V @ 1.25mA (Typ)

• Gate Charge (Qg) (Max) @ Vgs:20.4 nC @ 20 V
• Vgs (Max):+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:259 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):62.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3