RV2C002UNT2L
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 180MA DFN1006-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RV2C002UNT2L Datasheet
-
ECAD Model
- Share
In Stock: 118
Can ship immediately
Pricing:
- 1$0.42
- 8,000$0.0609
- 16,000$0.05176
- 24,000$0.04872
- 56,000$0.04567
- 200,000$0.04263
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:2Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id:1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:12 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):100mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DFN1006-3 (VML1006)
- Package / Case:SC-101, SOT-883
