SSM6J213FE(TE85L,F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P CH 20V 2.6A ES6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J213FE(TE85L,F Datasheet
-
ECAD Model
- Share
In Stock: 288
Can ship immediately
Pricing:
- 1$0.49
- 4,000$0.10321
- 8,000$0.09748
- 12,000$0.08888
- 28,000$0.08314
- 100,000$0.08028
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Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:103mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:ES6
- Package / Case:SOT-563, SOT-666
