SI1424EDH-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 4A SOT-363
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI1424EDH-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 162
Can ship immediately
Pricing:
- 1$0.45
- 3,000$0.14028
- 6,000$0.13223
- 15,000$0.12417
- 30,000$0.1145
- 75,000$0.11047
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V
- Rds On (Max) @ Id, Vgs:33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):1.56W (Ta), 2.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-363
- Package / Case:6-TSSOP, SC-88, SOT-363
