3LN01C-TB-E
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 150MA 3CP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 3LN01C-TB-E Datasheet
-
ECAD Model
- Share
In Stock: 104
Can ship immediately
Pricing:
- 1$0.08
- 3,000$0.08
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
- Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:1.58 nC @ 10 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:7 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):250mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:3-CP
- Package / Case:TO-236-3, SC-59, SOT-23-3
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