BSH205G2AR

Technical Details

• Series:Automotive, AEC-Q101, TrenchMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:118mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id:900mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:421 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):610mW (Ta), 10W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB
• Package / Case:TO-236-3, SC-59, SOT-23-3