BSP88L6327HTSA1

Rochester Electronics
In Stock: 100

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Pricing:
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Technical Details

  • Series:SIPMOS®
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):240 V
  • Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 350mA, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 108µA

 

  • Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:95 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

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