RM2A8N60S4

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:100mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:715 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-223-3
• Package / Case:TO-261-4, TO-261AA