IRF5805TRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIRF5805 - TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF5805TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 134
Can ship immediately
Pricing:
- 1$0.12
- 3,000$0.12
- 6,000$0.11226
- 15,000$0.10451
- 30,000$0.0991
- 75,000$0.09853
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:98mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:511 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Micro6™(TSOP-6)
- Package / Case:SOT-23-6 Thin, TSOT-23-6
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