IRFR9120NPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 6.6A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFR9120NPBF Datasheet
-
ECAD Model
- Share
In Stock: 148
Can ship immediately
Pricing:
- 1$0.17
- 10$0.1495
- 100$0.11698
- 500$0.0884
- 1,000$0.07207
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:480mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):40W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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