IRF8707PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 11A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF8707PBF Datasheet
-
ECAD Model
- Share
In Stock: 126
Can ship immediately
Pricing:
- 1$0.19
- 10$0.16269
- 100$0.12136
- 500$0.09536
- 1,000$0.07368
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:11.9mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
Related Products
MOSFET N-CH 30V 10A/28A 8PQFN DL
- 1: $0.19000
TRANSISTOR
- 1: $0.19000
N-CHANNEL MOSFET, DFN5060
- 1: $0.58000
N-CHANNEL MOSFET, DFN5060
- 1: $0.58000
MOSFET P-CHANNEL 30V 35A TO252-2
- 1: $0.19800
