IPD60R1K0CEATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4.3A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD60R1K0CEATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 113
Can ship immediately
Pricing:
- 1$0.21
- 2,500$0.21
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Technical Details
- Series:CoolMOS™ CE
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):37W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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