SI3129DV-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:82.7mOhm @ 3.8A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:805 pF @ 40 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta), 4.2W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-TSOP
• Package / Case:SOT-23-6 Thin, TSOT-23-6