SPP08P06PHXKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- Description8.8A, 60V, 0.3OHM, P-CHANNEL, M
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SPP08P06PHXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 147
Can ship immediately
Pricing:
- 1$0.29
- 10$0.25644
- 100$0.20262
- 500$0.15714
- 1,000$0.12406
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Technical Details
- Series:SIPMOS®
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:300mOhm @ 6.2A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):42W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3
- Package / Case:TO-220-3
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