IRLR3802TRPBF

Rochester Electronics
In Stock: 107

Can ship immediately

Pricing:
  • 1$0.37
  • 6,000$0.37

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id:1.9V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2.49 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):88W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-Pak
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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