IPD110N12N3GBUMA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):120 V
• Current - Continuous Drain (Id) @ 25°C:75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:11mOhm @ 75A, 10V
• Vgs(th) (Max) @ Id:4V @ 83µA

• Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4.31 pF @ 60 V
• FET Feature:-
• Power Dissipation (Max):136W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO252-3
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63