NTBS9D0N10MC

ON Semiconductor
In Stock: 78,014,571

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Pricing:
  • 1$1.68

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id:4V @ 131µA

 

  • Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1695 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2Pak)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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