IPL65R310E6AUMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 13.1A THIN-PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPL65R310E6AUMA1 Datasheet
-
ECAD Model
- Share
In Stock: 184
Can ship immediately
Pricing:
- 1$1.07
- 3,000$1.07
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Technical Details
- Series:CoolMOS™ E6
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):104W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Thin-Pak (8x8)
- Package / Case:4-PowerTSFN
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