SCT2120AFC
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 650V 29A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT2120AFC Datasheet
-
ECAD Model
- Share
In Stock: 1,879
Can ship immediately
Pricing:
- 1$14.28
- 10$13.12154
- 25$12.57828
- 100$11.08229
- 250$10.53838
- 500$9.85848
- 1,000$9.51853
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:156mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id:4V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs:61 nC @ 18 V
- Vgs (Max):+22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):165W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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