PHD38N02LT,118

Technical Details

• Series:TrenchMOS™
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:44.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:16mOhm @ 25A, 5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):57.6W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63