SSU1N60BTU-WS
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 900MA IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSU1N60BTU-WS Datasheet
-
ECAD Model
- Share
In Stock: 110
Can ship immediately
Pricing:
- 1$0.23535
- 5,040$0.23535
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Technical Details
- Series:-
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:12Ohm @ 450mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:215 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 28W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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