AOI4185

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:15mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2550 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-251A
• Package / Case:TO-251-3 Stub Leads, IPak