SISA66DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 40A PPAK1212-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISA66DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 160
Can ship immediately
Pricing:
- 1$0.42525
- 6,000$0.42525
Quote It
Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
- Vgs (Max):+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:3014 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):52W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8
- Package / Case:PowerPAK® 1212-8
Related Products
MOSFET N-CH 700V TDSON-8
- 1: $0.42682
MOSFET N-CH 25V 13.3A/89A DPAK
- 1: $0.42812
MOSFET N-CH 80V 11A/42A 5DFN
- 1: $0.42873
MOSFET N-CH 350V SOT89
- 1: $0.42909
MOSFET N-CH 30V 160A DPAK
- 1: $0.42910
- 2000: $0.42910