DN2535N3-G-P013

Technical Details

• Series:-
• Package:Tape & Box (TB)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):350 V
• Current - Continuous Drain (Id) @ 25°C:120mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On):0V
• Rds On (Max) @ Id, Vgs:25Ohm @ 120mA, 0V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
• FET Feature:Depletion Mode
• Power Dissipation (Max):1W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92 (TO-226)
• Package / Case:TO-226-3, TO-92-3 (TO-226AA)